Bias-Voltage Dependence of Tunneling Decay Coefficient and Barrier Height in Arylalkane Molecular Junctions with Graphene Contacts as a Protecting Interlayer

We studied a molecular junction with arylalkane self-assembled monolayers sandwiched between two graphene contacts. The arrangement of graphene-based junctions provides stable device structure high yield and allows for extensive transport measurements at 78 K. observed temperature-independent current density–voltage (J–V) characteristic the exponential dependency density on length, proving that charge occurs by non-resonant tunneling through barrier. Based Simmons model, bias-voltage dependence decay coefficient barrier height was extracted from variable-length characterizations. J–V data measured were simulated which modified lowering induced bias voltage. Indeed, there isno need adjustable fitting parameters. resulting simulation in remarkable consistency experimental over full range up to |V| ≤ 1.5 V case graphene/arylalkane/graphene heterojunctions. Our findings clearly showed demonstration reliable contacts their intrinsic characteristics, as well justifying application voltage-induced approximation junction.